bz x 84 c 2 v 4 thru bz x 84 c 39 silicon 41 0 m watt zener diodes features l planar die construction l 410mw power dissipation l zener voltages from 2.4v - 39v l ideally suited for automated assembly processes . mechanical data l case: sot-23, plastic l terminals: solderable per mil - std - 202, methode 208 l weight: 0.008 grams (approx.) maximum ratings @ 25 o c unless otherwise specified zener current i f 10 0 ma maximum forward voltage v f 1.2 v power dissipation ( note 1 ) p (av) 41 0 mwatt operation and storage temperature t j , t stg - 55 o c to + 150 o c p ea k f o r e ard s ur ge i fs m 2.0 a www. mccsemi .com mcc sot-23 suggested solder pad layout dimensions inches mm dim min max min max note a .110 .120 2.80 3.04 b .083 .098 2.10 2.64 c .047 .055 1.20 1.40 d .035 .041 .89 1.03 e .070 .081 1.78 2.05 f .018 .024 .45 .60 g .0005 .0039 .013 .100 h .035 .044 .89 1.12 j .003 .007 .085 .180 k .015 .020 .37 .51 a b c d e f g h j .079 2.000 inches mm .031 .800 .035 .900 .037 .950 .037 .950
om p on ent s 21 20 1 i t a sc a s t ree t ch at s w or th ! " # $
% ! " # c u rr e nt 8 .3 ms h a lf notes: a. mounted on 5.0mm2(.013mm thick) land areas. b. measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum. *pin configuration - top view
bzx84c2v 4 th ru bzx84c 39 ww w . mccsemi .com mcc note: 1 . t o ler a nce a nd t ype number d e sig n ation. the type numbers listed have a st a ndard toler a nce on the nomi n al zener voltage of 5%. 2 . sp e c i als a vail a ble include: a. nominal zener voltages between the voltages shown and tighter voltage tolerances. b. matched sets. 3 . zener v oltage ( v z ) me a surement. guar a ntees the zener voltage when m e a sured at 90 seconds while maintaining the le a d t e mperature ( t l ) at 3 0 o c, from the diode bod y . 4 . zener impedance ( z z ) derivation. the zener impedance is derived from the 60 cycle ac voltage, which results when an ac current having an rms value equal to 10% of the dc zener current (i zt or i z k ) is superimposed on i zt or i z k . 5 . surge current ( i r ) non-repetitive. the rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge cur r ent of 1/2 square wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current, i z t , per jedec registration; however, actual device capability is as described in figure 5. electrical characteristics (ta=25 degree c unless otherwise noted) vf=1.2v max, if=100ma for all types. nom. v min. v max. v ohm ma ohm ma u a v bzx84c2v4 w1 2.4 2.28 2.52 100 5 600 1 50 1 bzx84c2v7 w2 2.7 2.5 2.9 100 5 600 1 20 1 BZX84C3 w3 3 2.8 3.2 95 5 600 1 10 1 BZX84C3v3 w4 3.3 3.1 3.5 95 5 600 1 5.0 1 BZX84C3v6 w5 3.6 3.4 3.8 90 5 600 1 5.0 1 BZX84C3v9 w6 3.9 3.7 4.1 90 5 600 1 3.0 1 bzx84c4v3 w7 4.3 4 4.6 90 5 600 1 3.0 1 bzx84c4v7 w8 4.7 4.4 5 80 5 500 1 3.0 2 bzx84c5v1 w9 5.1 4.8 5.4 60 5 480 1 2.0 2.0 bzx84c5v6 wa 5.6 5.2 6 40 5 400 1 1.0 2.0 bzx84c6v2 wb 6.2 5.8 6.6 10 5 150 1 3.0 4.0 bzx84c6v8 wc 6.8 6.4 7.2 15 5 80 1 2.0 4.0 bzx84c7v5 wd 7.5 7 7.9 15 5 80 1 1.0 5 bzx84c8v2 we 8.2 7.7 8.7 15 5 80 1 0.7 5 bzx84c9v1 wf 9.1 8.5 9.6 15 5 100 1 0.5 6 bzx84c10 wg 10 9.4 10.6 20 5 150 1 0.2 7.0 bzx84c11 wh 11 10.4 11.6 20 5 150 1 0.1 8.0 bzx84c12 wi 12 11.4 12.7 25 5 150 1 0.1 8.0 bzx84c13 wk 13 12.4 14.1 30 5 170 1 0.1 8.0 bzx84c15 wl 15 13.8 15.6 30 5 200 1 0.1 10.5 bzx84c16 wm 16 15.3 17.1 40 5 200 1 0.1 11.2 bzx84c18 wn 18 16.8 19.1 45 5 225 1 0.1 12.6 bzx84c20 wo 20 18.8 21.2 55 5 225 1 0.1 14.0 bzx84c22 wp 22 20.8 23.3 55 5 250 1 0.1 15.4 bzx84c24 wr 24 22.8 25.6 70 5 250 1 0.1 16.8 bzx84c27 ws 27 25.1 28.9 80 5 300 1 0.1 18.9 BZX84C30 wt 30 28 32 80 5 300 1 0.1 21.0 BZX84C33 wu 33 31 35 80 5 325 1 0.1 23.1 BZX84C36 ww 36 34 38 90 5 350 1 0.1 25.2 BZX84C39 wx 39 37 41 130 5 350 1 0.1 27.3 type nimber marking code nominal zener voltage max. zener impedance max.reverse leakage current vz @ iz t zz t @ iz t zz k @ iz k i r @ v r
bzx84c2v 4 thru bzx84c 39 www. mccsemi .com mcc typical reverse current tempera ture coefficient ,mv / c) o nominal zener voltage, volts -1 0 1 2 3 4 5 6 7 8 12 11 10 98765432 -2 -3 stea d y s t a te power der a ting effect of zener vo l t age on zener impe d ance 100101 1000 100 10 1 i z =1ma 5ma 20 ma dynamic impedance, normal zener voltage, volts t j =25 c o i z(ac)=0.1 i f=1 khz z(dc) for w ard current ,m a typical for w ard vo l t age forward voltage, volts 1.21.11.00.90.80.70.60.50.4 1000 100 10 1 75 c o 5c o 25 c o 150 c o typical ca p aci t ance 100 1000 100 10 1 101 bias at 50% of v z nom 0 v bias 1 v bias cap acit ance, pf nominal zener voltage, volts t =25 c a o 100 10 1 nominal zener voltage, volts tempera ture coefficient ,mv / c) o 10 100 temperature ( c ) o power dissip a t ion, w a tts stea d y s t a te power der a ting 1.2 1.0 0.8 0.6 0.4 0.2 0 150125100755025 p dv . s .t a 155
bzx84c2v 4 thru bzx84c 39 mcc www. mccsemi .com zener vo l t age v .s. zener current typical leakge current 90 1000 100 10 1 0.1 0.01 0.001 0.0001 0.00001 80706050403020100 leakage current ( a) nominal zener voltage, vlots +150 c o +25 c o -55 c o 12 100 10 1 0.1 0.01 1086420 zener current ,m a zener voltage, volts t =25 c a o 100 10 1 0.1 0.01 10 30 50 70 90 t =25 c a o zener voltage, volts zener vo l t age v .s. zener current zener current ,m a
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